The mastery over the fabrication of our samples is of course at the crux of our research activities. Here, the challenge is to develop tailor-made processing technologies targeted towards different materials systems (GaAs, InP, InGaP,etc ...) to obtain nanometric dimensions control, ultra-smooth quality of sidewalls, high reliability and repeatability..
Our research team makes use of the exceptional C2N's cleanroom facilities to process hybrid nanostructures. During the past years, we established state of the art processing techniques such as adhesive wafer bonding (BCB bonding), electron beam lithography and inductively coupled plasma etching, to meet the above mentioned requirements and enable the fabrication of the desired structures. See below some pictures of our latest samples
Nanolaser diode
Nano-amplifier
Coupled nanobeam cavities
Related publications:
Hybrid indium phosphide-on-silicon nanolaser diodes
G. Crosnier, R. D. Sanchez, S. Bouchoule, P. Monnier, G. Beaudoin, I. Sagnes, R. Raj, F. Raineri, Nature Phot. 11, 297 (2017)
High Q-factor InP Photonic Crystal Nanobeam cavities on Silicon wire waveguides
G. Crosnier, D. Sanchez, A. Bazin, P. Monnier, S. Bouchoule, R. Braive, G. Beaudoin, I. Sagnes, R. Raj, F. Raineri, Opt. Lett. 41, 579 (2016)
Subduing surface recombination for continuous-wave operation of photonic crystal nanolasers integrated on Silicon waveguides
G. Crosnier, A. Bazin, V. Ardizzone, P. Monnier, R. Raj, F. Raineri, Opt. Express 23, 27953 (2015)
Uniformity of the lasing wavelength of heterogeneously integrated InP microdisk lasers on SOI
P. Mechet, F. Raineri, A. Bazin, Y. Halioua, T. Spuesens, T. J. Karle, P. Regreny, P. Monnier, D. Van Thourhout, I. Sagnes, R. Raj, G. Roelkens, G. Morthier, Opt. Express 21, 10622 (2013)
Heterogeneous integration and precise alignment of InP-based photonic crystal lasers to complementary metal-oxide semiconductor fabricated silicon-on-insulator wire waveguides
T. J. Karle, Y. Halioua, F. Raineri, P. Monnier, R. Braive, L. Le Gratiet, G. Beaudoin, I. Sagnes, G. Roelkens, F. Van Laere, D. Van Thourhout, R. Raj, J. Appl. Phys. 107, 63103 (2010)
